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| SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT C KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR A B D E F FEATURES High Power Dissipation : PC=1.5W(Ta=25 ) Complementary to KTB1151. H J G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * PW 10ms, Duty Cycle 50% Ta=25 Tc=25 DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 60 60 7 5 8 1 1.5 20 150 -55 150 UNIT V V V A A W N K L M O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current ICBO IEBO hFE 1 DC Current Gain * ) TEST CONDITION VCB=50V, IE=0 VEB=7V, IC=0 VCE=1V, IC=0.1A VCE=1V, IC=2A VCE=2V, IC=5A IC=2A, IB=0.2A IC=2A, IB=0.2A OUTPUT 20sec IB1 IB2 I B2 5 INPUT I B1 SYMBOL MIN. 60 160 50 - TYP. 0.1 0.9 0.2 1.1 0.2 MAX. 10 10 400 0.3 1.2 1 2.5 1 UNIT A A hFE2 (Note) hFE 3 Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time * Pulse test : PW * VCE(sat) VBE(sat) ton tstg tf V V S IB1=-I B2 =0.2A DUTY CYCLE < 1% = VCC =10V 50 S, Duty Cycle 2% Pulse O:160 320, Y:200 400. Note) hFE(2) Classification : 2003. 7. 24 Revision No : 3 1/3 KTD1691 Pc - Ta 25 POWER DISSIPATION PC (W) 20 15 10 5 2 1 1 Tc=Ta 2 NO HEAT SINK d T - TC 160 140 I C DERATING d T (%) 120 100 80 60 40 20 S/b Lim Di ited ssi pa tio nL im ite d INFINITE HEAT SINK 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta ( C) 0 0 25 50 75 100 125 150 175 200 CASE TEMPERATURE Tc ( C) SAFE OPERATING AREA COLLECTOR CURRENT I C (A) S 10 mS * 0m * ip ati S on Li m ite d 20 S/ bL im ite d REVERSE BIAS SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 10 I (Pulse) MAX. C 5 3 I C (DC) MAX. Di ss 2m 8 6 4 2 0 1 0.5 0.3 0.1 1 VCEO MAX. * SINGLE NONREPETITVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 3 5 10 30 50 100 0 20 40 60 VCEO (SUS) 80 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - VCE 10 COLLECTOR CURRENT I C (A) 8 IB =1 50 h FE - I C 1k 500 300 100 50 30 10 5 3 1 0.01 DC CURRENT GAIN h FE mA 10 I B= A 0m I B =80mA VCE =2V VCE =1V I B=60mA A 4 2 0 0 IB = 200 m 6 I B=40mA mA I B =30 I B =20mA I B =10mA I B =0mA 0.4 0.8 1.2 1.6 2.0 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 2/3 KTD1691 V BE(sat), V CE(sat) - I C 10 STATURATION VOLTAGE VBE(sat), VCE(sat) (V) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 VCE(sat) VBE(sat) I C /I B =10 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 3/3 |
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